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this is information on a product in full production. february 2013 doc id 022865 rev 2 1/21 21 stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 n-channel 650 v, 0.160 typ., 18 a mdmesh? v power mosfet in d 2 pak, i 2 pak, to-220 and to-247 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v ds @ t jmax r ds(on) max i d stb20n65m5 710 v 0.19 18 a sti20n65m5 STP20N65M5 stw20n65m5 to-247 to-220 i 2 pa k 1 2 3 tab 1 2 3 d 2 pak 1 3 2 tab 1 2 3 tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging stb20n65m5 20n65m5 d 2 pak tape and reel sti20n65m5 i 2 pa k tu b e STP20N65M5 to-220 stw20n65m5 to-247 www.st.com
contents stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 2/21 doc id 022865 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 electrical ratings doc id 022865 rev 2 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 a i d drain current (continuous) at t c = 100 c 11.3 a i dm (1) drain current (pulsed) 72 a p tot total dissipation at t c = 25 c 130 w dv/dt (1) 1. i sd 18 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pak i 2 pak, to-220 to-247 r thj-case thermal resistance junction-case max 0.96 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 1 oz copper board. thermal resistance junction-pcb max 30 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 270 mj
electrical characteristics stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 4/21 doc id 022865 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.160 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1434 38 3.7 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 - 118 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -35-pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 9 a, v gs = 10 v (see figure 18 ) - 36 7.5 18 - nc nc nc
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 electrical characteristics doc id 022865 rev 2 5/21 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 12 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 43 7.5 7.5 11.5 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 18 72 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 288 4 27 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 342 4.7 28 ns c a
electrical characteristics stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 6/21 doc id 022865 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak, i2pak, to-220 figure 3. thermal impedance for d2pak, i2pak, to-220 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am155 8 4v1 figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am155 8 6v1 figure 6. output characteristics figure 7. transfer characteristics i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9, 10 v 25 3 0 3 5 40 am155 8 7v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 25 9 v d s = 25 v 3 0 3 5 40 am155 88 v1
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 electrical characteristics doc id 022865 rev 2 7/21 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =9a 3 00 200 100 0 400 500 v d s (v) v d s 12 am155 8 9v1 r d s (on) 0.155 0.145 0.1 3 5 0.125 0 10 i d (a) ( ) 5 15 0.165 0.175 v g s =10v 0.1 8 5 0.195 am15590v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am15591v1 e o ss 2 1 0 0 100 v d s (v) ( j) 400 3 200 3 00 4 5 500 600 6 7 am15592v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10v i d = 9 a am05460v1
electrical characteristics stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 8/21 doc id 022865 rev 2 figure 14. normalized b vdss vs temperature figure 15. drain-source diode forward characteristics v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 3 0 50 100 40 i d =12a v dd =400v eon eoff 150 v g s =10v 200 250 am1559 3 v1
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 test circuits doc id 022865 rev 2 9/21 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 10/21 doc id 022865 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 package mechanical data doc id 022865 rev 2 11/21 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 12/21 doc id 022865 rev 2 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 package mechanical data doc id 022865 rev 2 13/21 figure 25. i2pak (to-262) drawing table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
package mechanical data stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 14/21 doc id 022865 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 package mechanical data doc id 022865 rev 2 15/21 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 16/21 doc id 022865 rev 2 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 package mechanical data doc id 022865 rev 2 17/21 figure 27. to-247 drawing 0075 3 25_g
packaging mechanical data stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 18/21 doc id 022865 rev 2 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 packaging mechanical data doc id 022865 rev 2 19/21 figure 28. tape figure 29. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb20n65m5, sti20n65m5, STP20N65M5, stw20n65m5 20/21 doc id 022865 rev 2 6 revision history table 14. document revision history date revision changes 06-mar-2012 1 first release. 01-feb-2013 2 ? the part numbers stf20n65m5 and stfi20n65m5 have been moved to a separate datasheet. ? added: part numbers stb20n65m5 and sti20n65m5 ? modified: note 1 on ta bl e 2 , ta bl e 4 values and typical values of ta bl e 5 , 6 , 7 , 8 ? added: r thj-pcb and note 1 on ta bl e 3 ? updated: section 4: package mechanical data ? added: section 2.1: electrical characteristics (curves)
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